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Other articles related with "SiGe heterojunction photo-transistor (HPT)"：
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28501 |
Xian-Cheng Liu(刘先程), Jia-Jun Ma(马佳俊), Hong-Yun Xie(谢红云), Pei Ma(马佩), Liang Chen(陈亮), Min Guo(郭敏), Wan-Rong Zhang(张万荣) |
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Effects of buried oxide layer on working speed of SiGe heterojunction photo-transistor |
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Chin. Phys. B
2020 Vol.29 (2): 28501-028501
[Abstract]
(550)
[HTML 1 KB]
[PDF 515 KB]
(207)
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